High-Performance SiC FETs

United Silicon Carbide’s FET products co-package its xJseries high-performance SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of • Max. on-resistance RDS(on)max of 60mΩ\n\n• Standard 12V gate drive w PV inverters\n\n• Maximum operating temperature of 150°C\n\n• Excellent reverse recovery\n\n• Low gate charge\n\n• Low intrinsic capacitance;

Qorvo

威讯联合

丝印：UJC1206K；Package：TO-247-3L；60mW - 1200V SiC Cascode

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UNITEDSIC

UnitedSiC.

Surface Mount 2-Electrode Gas Discharge Tube

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UNSEMI

优恩半导体

Surface Single Gas Discharge Tube

Features Non-Radioactive ROHS compliant Ultra low capacitance (

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UNSEMI

优恩半导体

Surface Mount Fuses

文件：1.48006 Mbytes 页数：5 Pages

UNSEMI

优恩半导体