丝印：UJ4C075044；Package：MO-229；750V-44mW SiC FET

Description The UJ4C075044L8S is a 750V, 44mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-s

文件：1.28857 Mbytes 页数：13 Pages

QORVO

威讯联合

丝印：UJ4C075044K3S；Package：TO-247-3L；750V-44mW SiC FET

文件：900.52 Kbytes 页数：15 Pages

UNITEDSIC

UnitedSiC.

丝印：UJ4C075044K4S；Package：TO-247-4L；750V-44mW SiC FET

文件：904.22 Kbytes 页数：15 Pages

UNITEDSIC

UnitedSiC.

丝印：UJ4C075044；Package：MO-229；750V-44mW SiC FET

Description The UJ4C075044L8S is a 750V, 44mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-s

文件：1.28857 Mbytes 页数：13 Pages

QORVO

威讯联合

丝印：UJ4C075044K3S；Package：TO-247-3L；750V-44mW SiC FET

文件：900.52 Kbytes 页数：15 Pages

UNITEDSIC

UnitedSiC.

丝印：UJ4C075044K4S；Package：TO-247-4L；750V-44mW SiC FET

文件：904.22 Kbytes 页数：15 Pages

UNITEDSIC

UnitedSiC.

SiC N-Channel MOSFET

FEATURES · Drain Current -ID= 37.4A@ TC=25℃ · Drain Source Voltage -VDSS= 750V(Min) · Static Drain-Source On-Resistance -RDS(on) = 56mΩ(Max)@VGS= 12V APPLICATIONS · PV inverters · Switch mode power supplies · Power factor correction modules

文件：373.16 Kbytes 页数：3 Pages

ISC

无锡固电

750V-44mW SiC FET

文件：784.61 Kbytes 页数：12 Pages

UNITEDSIC

UnitedSiC.