UJ4C075044L8S中文资料威讯联合数据手册PDF规格书

描述 Description

The UJ4C075044L8S is a 750V, 44mΩ G4 SiC FET. It is based on a

unique ‘cascode’ circuit configuration, in which a normally-on SiC

JFET is co-packaged with a Si MOSFET to produce a normally-off SiC

FET device. The device’s standard gate-drive characteristics allows

use of off-the-shelf gate drivers hence requiring minimal re-design

when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.

Available in the space-saving MO-229 package which enables

automated assembly, this device exhibits ultra-low gate charge and

exceptional reverse recovery characteristics, making it ideal for

switching inductive loads and any application requiring standard gate

drive.

特性 Features

● On-resistance RDS(on): 44mW (typ)

● Operating temperature: 175°C (max)

● Excellent reverse recovery: Qrr = 89nC

● Low body diode VFSD: 1.2V

● Low gate charge: QG = 37.8nC

● Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive

● Low intrinsic capacitance

● ESD protected: HBM class 2 and CDM class C3

● TOLL package for faster switching, clean gate waveforms

Typical applications

● EV charging

● PV inverters

● Switch mode power supplies

● Power factor correction modules

● Induction heating