UGF19060P资料使用说明书库存现货飞思卡尔-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AGR19060E	文件：412.49 Kbytes Page：10 Pages	60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess	TriQuint TriQuint Semiconductor	TriQuint
AGR19060EF	文件：412.49 Kbytes Page：10 Pages	60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess	TriQuint TriQuint Semiconductor	TriQuint
AGR19060EU	文件：412.49 Kbytes Page：10 Pages	60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess	TriQuint TriQuint Semiconductor	TriQuint
LET19060C	文件：34.75 Kbytes Page：4 Pages	RFPOWERTRANSISTORSLdmosEnhancedTechnology DESCRIPTION TheLET19060CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheLET19060Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
MRF19060	文件：387.9 Kbytes Page：8 Pages	RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,2	MotorolaMotorola, Inc 摩托罗拉	Motorola
MRF19060	文件：414.52 Kbytes Page：8 Pages	RFPowerFieldEffectTransistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,26VoltsIS-95CDMA	freescaleFreescaleiscreatingasmarter 飞思卡尔	freescale
ZXTN19060CFF	文件：513.63 Kbytes Page：6 Pages	60V,SOT23F,NPNhighgainpowertransistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof	Zetex Zetex Semiconductors	Zetex
ZXTN19060CFF	文件：377.6 Kbytes Page：7 Pages	60VNPNHIGHGAINPOWERTRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CFFTA	文件：377.6 Kbytes Page：7 Pages	60VNPNHIGHGAINPOWERTRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CFFTA	文件：513.63 Kbytes Page：6 Pages	60V,SOT23F,NPNhighgainpowertransistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof	Zetex Zetex Semiconductors	Zetex
ZXTN19060CG	文件：317.33 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat	Zetex Zetex Semiconductors	Zetex
ZXTN19060CG	文件：324.55 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CGTA	文件：324.55 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CGTA	文件：487.42 Kbytes Page：7 Pages	60VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CGTA	文件：317.33 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat	Zetex Zetex Semiconductors	Zetex
ZXTP19060C	文件：212.88 Kbytes Page：8 Pages	60VPNPmediumtransistor Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HighGain •Lowsaturationvoltage •Highpeakcurrent •7Vreverse	Zetex Zetex Semiconductors	Zetex
ZXTP19060CFF	文件：462.64 Kbytes Page：8 Pages	60V,SOT23F,PNPmediumpowertransistor Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTP19060CFF	文件：450.41 Kbytes Page：8 Pages	60V,SOT23F,PNPmediumpowertransistor Description ThismediumvoltagePNPtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhilstofferingalowerprofileandhigherpowerdissipationforapplicationswherepow	Zetex Zetex Semiconductors	Zetex
ZXTP19060CFF	文件：432.65 Kbytes Page：7 Pages	60VPNPMEDIUMPOWERTRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTP19060CFFTA	文件：462.64 Kbytes Page：8 Pages	60V,SOT23F,PNPmediumpowertransistor Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens	DIODESDiodes Incorporated 达尔科技	DIODES

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	UGF19060P	CREE/科锐	23+		280	现货供应	询价
深圳市百诺芯科技有限公司	UGF19060P	CREE/科锐	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市惊羽科技有限公司	UGF19060P	CREE-科锐	24+25+/26+27+	TO-59.高频管	18800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
贸泽芯城（深圳）电子科技有限公司	UGF19085	CREE/科锐			11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳好佳好科技有限公司	UGF19125F	CREE	16+	大渡金高频	50000	绝对原装进口现货可开17%增值税发票	询价
深圳市莱克讯科技有限公司	UGF19125F	CREE	2017+	SMD	24589	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价
深圳市华斯顿科技有限公司	UGF2004G	TSC原装	22+23+	TO-220F	22723	绝对原装正品全新进口深圳现货	询价
瀚佳科技(深圳)有限公司	UGF2004G	TSC原装	19+	TO-220F	9860	一级代理	询价
深圳市百视威讯电子科技有限公司	UGF2004G		23+	N/A	85400	正品授权货源可靠	询价
深圳市宏捷佳电子科技有限公司	UGF2004G	Taiwan Semiconductor Corporati	24+	TO-220-3 全封装,隔离接片	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价

更多UGF19060P供应商更新时间2024-5-24 13:26:00

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