首页 >ULN2801A>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

ULN2801A

Eight Darlington array

DESCRIPTION TheULN2801A-ULN2805Aeachcontaineightdarlingtontransistorswithcommonemittersandinte gralsuppressiondiodesforinductiveloads.Eachdarlingtonfeaturesapeakloadcurrentratingof 600mA(500mAcontinuous)andcanwithstandatleast50Vintheoffstate.Outputsmaybepar

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

2801

42MHzsurfacemountbandpassfilter

GeneralDescription KR2801isa42MHzsurfacemountbandpassfilter.Thefilterhasaminimum3dBbandwidthof4MHz.Otherpassbandfrequenciesareavailable.Pleaseconsultthefactory. Features •42MHzCenterFrequency •SurfaceMountPackage •50ΩSourceandLoad

KRKR Electronics, Inc.

KR Electronics, Inc.

KR

2801P-R-ST

MultimodeCATVTransport

EMCORE

Emcore Corporation

EMCORE

2801P-R-ST

2801PRO5ChannelMultimodeCATVVSB/AMVideoLink

EMCORE

Emcore Corporation

EMCORE

2801P-R-ST

MultimodeCATVVSB/AM

EMCORE

Emcore Corporation

EMCORE

2801-SMA

42MHzCenterFrequency

KRKR Electronics, Inc.

KR Electronics, Inc.

KR

AAT2801

Multi-ModeChargePumpforWhiteLEDBacklightandFlashApplications

ANALOGICTECHAdvanced Analogic Technologies

研诺科技研诺逻辑科技有限公司

ANALOGICTECH

ACT2801

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACTIVE-SEMI

ACT2801

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACTIVE-SEMI

ACT2801CQL-T

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACTIVE-SEMI

AON2801

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON2801/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. AON2801andAON2801Lareelectricallyidentical. -RoHSCompli

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

APM2801B

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TR

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TRL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TU

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

APM2801BC-TUL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

ANPEC

ASIKV2801

SILICONHYPERABRUPTTUNINGVARACTOR

ASI

Advanced Semiconductor, Inc

ASI

BGA2801

MMICwidebandamplifier

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

BGA2801

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

CFS2801

WIREWOUNDCOMMONMODEFILTERS

FRONTIER

Frontier Electronics

FRONTIER

详细参数

  • 型号:

    ULN2801A

  • 功能描述:

    达林顿晶体管 Eight NPN Array

  • RoHS:

  • 制造商:

    Texas Instruments

  • 配置:

    Octal

  • 晶体管极性:

    NPN 集电极—发射极最大电压

  • VCEO:

    50 V 发射极 - 基极电压

  • VEBO:

    集电极—基极电压

  • 最大直流电集电极电流:

    0.5 A

  • 最大工作温度:

    + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOIC-18

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
STMicroelectronics
23+
18-DIP(0.300,7.62mm)
30000
晶体管-分立半导体产品-原装正品
询价
ST(意法半导体)
23+
DIP-18
921
原厂订货渠道,支持BOM配单一站式服务
询价
ALL
22+
DIP-18
100
只做原装进口 免费送样!!
询价
ST/意法
22+
78900
询价15919799957
询价
ST/意法半导体
22+
PDIP-18
6006
原装正品现货 可开增值税发票
询价
ST
22+
DIP-18
20000
只做原装,支持实单,来电咨询。
询价
ST
22+
DIP-18
20000
公司只有原装
询价
ST
23+
DIP-18
20000
只有原装正品
询价
ST
23+
DIP-18
20000
原装,可配单
询价
ST/意法半导体
2023
PDIP-18
6000
公司原装现货/支持实单
询价
更多ULN2801A供应商 更新时间2024-4-27 11:22:00