SiC FETs

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE • Typical RDS(on) - 45mΩ\n\n• Maximum operating temperature of 150°C\n\n• Excellent reverse recovery\n\n• Low gate charge\n\n• Low intrinsic capacitance\n\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UF3SC065040D8S；Package：DFN8X8-4L；650V-45mW SiC FET

文件：520.64 Kbytes 页数：10 Pages

UNITEDSIC

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MIC
DO-41

MIC

昌福电子

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DIODES
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DIODES

美台半导体

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UTC(友顺)
TO252

UTC(友顺)

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