650V-580mW SiC Normally-on JFET

文件：293.46 Kbytes 页数：8 Pages

UNITEDSIC

UnitedSiC.

650V-580mW SiC Normally-on JFET

United Silicon Carbide, Inc offers the high-performance G3 SiCnormally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal f • Typical on-resistanceRDS(on),typ of 580mΩ\n\n• Voltage controlled\n\n• Maximum operating temperature of 175°C\n\n• Extremely fast switching not dependent on temperature\n\n• Low gate charge\n\n• Low intrinsic capacitance;

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650V-580mW SiC Normally-on JFET

文件：293.46 Kbytes 页数：8 Pages

UNITEDSIC

UnitedSiC.

TO263-7

USCI

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DO-41

MIC

昌福电子

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