UF3N065600数据手册Qorvo中文资料规格书

描述 Description

United Silicon Carbide, Inc offers the high-performance G3 SiCnormally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for FET operation.

特性 Features

• Typical on-resistanceRDS(on),typ of 580mΩ

• Voltage controlled

• Maximum operating temperature of 175°C

• Extremely fast switching not dependent on temperature

• Low gate charge

• Low intrinsic capacitance