首页>UF3C120080K4S>规格书详情
UF3C120080K4S中文资料1200 V, 80 mohm SiC FET数据手册Qorvo规格书
UF3C120080K4S规格书详情
描述 Description
Qorvo's UF3C120080K4S 1200 V, 80 mohm FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
特性 Features
• On-resistance RDS(on): 80 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery
• Low gate charge
• Low intrinsic capacitance
• ESD protected, HBM class 2
应用 Application
• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating
技术参数
- 制造商编号
：UF3C120080K4S
- 生产厂家
：Qorvo
- RDS(on) 典型值 @ 25C(mohm)
：80
- ID 最大值(A)
：33
- 代
：Gen 3
- Tj 最大值(°C)
：175
- 车规级认证
：Yes
- 封装类型
：TO-247-4L
- RoHS
：Yes
- Lead Free
：Yes
- Halogen Free
：Yes
- ITAR Restricted
：No
- ECCN
：EAR99
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANJIT/强茂 |
24+ |
NA/ |
16250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
UNITEDSIC |
2517+ |
TO-247 |
8850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
PANJIT/强茂 |
21+ |
DO-214ABSMC |
20000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
VISHAYMAS |
25+23+ |
DO-214ABSMC |
52233 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
UnitedSiC |
24+ |
TO-263-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
SunonFans |
新 |
5 |
全新原装 货期两周 |
询价 | |||
SUNMATE(森美特) |
2019+ROHS |
DO-214AB(SMC) |
66688 |
森美特高品质产品原装正品免费送样 |
询价 | ||
ON/DIODES/PANJIT |
24+ |
SMCDO-214AB |
43000 |
询价 | |||
PANJIT |
16+ |
SMC |
135000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
询价 | ||
CHONGQING |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
询价 |
