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UF3C065030K3S数据手册Qorvo中文资料规格书
UF3C065030K3S规格书详情
描述 Description
Qorvo's UF3C065030K3S 650 V, 27 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are available in a TO-247-3L package and are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
特性 Features
• On-resistance (RDS(on)): 27 mohm (typ)
• Maximum operating temperature: 175 °C
• Excellent reverse recovery
• Low gate charge
• Low intrinsic capacitance
• ESD protected, HBM class 2
应用 Application
• EV Charging
• PV Inverters
• Switched-Mode Power Supplies
• Power Factor Correction Modules
• Motor Drives
• Induction Heating
技术参数
- 制造商编号
：UF3C065030K3S
- 生产厂家
：Qorvo
- RDS(on) 典型值 @ 25C(mohm)
：27
- ID 最大值(A)
：85
- 代
：Gen 3
- Tj 最大值(°C)
：175
- 车规级认证
：Yes
- 封装类型
：TO-247-3L
- RoHS
：Yes
- Lead Free
：Yes
- Halogen Free
：Yes
- ITAR Restricted
：No
- ECCN
：EAR99
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UnitedSic |
两年内 |
NA |
20 |
实单价格可谈 |
询价 | ||
UNITEDSIC |
23+ |
TO-220-3L |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
USCI |
2223+ |
D2PAK-7 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
UNITEDSIC |
22+ |
TO-247-3 |
9000 |
原装正品,支持实单! |
询价 | ||
UNITEDSIC |
24+ |
TO-247-3 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
UNITEDSIC |
24+ |
TO-247-3 |
5000 |
全新原装正品,现货销售 |
询价 | ||
UNITEDSIC |
23+ |
TO-247-3 |
470 |
正规渠道,只有原装! |
询价 | ||
UNITEDSIC |
23+ |
TO-247-3 |
20000 |
询价 | |||
QORVO |
24+ |
N/A |
1688 |
原装原装原装 |
询价 | ||
Qorvo |
ROHS, |
原封 |
1786 |
:MOSFET 1200V/80mO,SICFET,G3,TO263-7 |
询价 |
