650 V, 85 mohm SiC FET

Qorvo's UF3C065080B7S 650 V, 85 mohm RDS(on) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows use of off-the-shelf gate • On-resistance (RDS(on)): 85 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery: Qrr = 69 nC\n• Low body diode VFSD: 1.54 V\n• Low gate charge: QG = 23 nC\n• Threshold voltage VG(th): 4.8 V (typ) allowing 0 to 15 V drive;

Qorvo

威讯联合

丝印：UF3C065080B7S；Package：D2PAK-7L；650V-85mW SiC FET

文件：436.44 Kbytes 页数：10 Pages

UNITEDSIC

UnitedSiC.

TO263-7

USCI

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DO-41

MIC

昌福电子

上传：深圳市乐创天科技有限公司

TO252

DIODES

美台半导体

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