650 V, 42 mohm SiC FET

Qorvo's UF3C065040K3S 650 V, 42 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery cha • On-resistance (RDS(on)): 42 mohm (typ)\n• Maximum operating temperature: 175 °C\n• Excellent reverse recovery\n• Low gate charge\n• Low intrinsic capacitance\n• ESD protected, HBM class 2;

Qorvo

威讯联合

丝印：UF3C065040K3S；Package：TO-247-3L；42mW - 650V SiC Cascode

文件：557.2 Kbytes 页数：11 Pages

UNITEDSIC

UnitedSiC.

TO263-7

USCI

上传：深圳市斌腾达科技有限公司

DO-41

MIC

昌福电子

上传：深圳市乐创天科技有限公司

TO252

DIODES

美台半导体

上传：深圳市伟胜微电子有限公司