BD45371

Marking：U3；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD45371G

Marking：U3；Package：SSOP5；Voltage Detector IC built in Delay Citcuit

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-incoun

BD46375G

Marking：U3；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BZX84J-C2V4

Marking：U3；Package：SOD323F；Single Zener diodes

1.1Generaldescription General-purposeZenerdiodesinaSOD323F(SC-90)verysmallandflatlead Surface-MountedDevice(SMD)plasticpackage. 1.2Featuresandbenefits 1.3Applications Generalregulationfunctions Non-repetitivepeakreversepower dissipation:40W Wideworking

BZX84W-C43

Marking：U3；Package：SOT323；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 3.Applications •Gene

BZX84W-C43-Q

Marking：U3；Package：SC-70；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinaSOT323(SC-70)leadlessverysmallSurface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Wideworkingvoltagerange:nominal2.4Vto75V(E24range) •Twotoleranceseries:±2and±5 •Qualifiedaccordingto

CZRF2V7B-HF

Marking：U3；Package：SOD-323F；SMD Zener Diode

Voltage2.4to39Volts Power200mWatts RoHSDevice HalogenFree Features -200mWPowerDissipation. -HighVoltagesfrom2.4~39V. -Designedformountingonsmallsurface. -Extremelythin/leadlesspackage. -Constantvoltagecontrol. -Pbfreeproduct. Mechanicaldata -Case:100

DMN31D5UDJ-7

Marking：U3；Package：SOT963；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features LowOn-Resistance VeryLowGateThresholdVoltage,1.0VMax LowInputCapacitance FastSwitchingSpeed Ultra-SmallSurfaceMountPackage1mmx1mm ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(N

NSVUMC3NT1G

Marking：U3；Package：SC-88A；Dual Common Base-Collector Bias Resistor Transistors

TheBiasResistorTransistor(BRT)containsasingletransistorwith amonolithicbiasnetworkconsistingoftworesistors;aseriesbase resistorandabase−emitterresistor.Thesedigitaltransistorsare designedtoreplaceasingledeviceanditsexternalresistorbias network.TheBRTelim

PE1605M2Q_R1_00001

Marking：U3；Package：DFN-3L；Ultra Low Capacitance ESD Protection

Features IEC61000-4-2(ESD)：±20kVAir,±15kVContact IEC61000-4-4(EFT)：40A(5/50ns) IEC61000-4-5(Lightning)：4A(8/20μS) Lowleakagecurrent,maximumof50nAatratedvoltage Ultralowcapacitance Lowclampingvoltage LeadfreeincompliancewithEURoHS2.0(2011/65/EU &2015/865