丝印：U32F；Package：SOT-23；SN74AUC1G32 Single 2-Input Positive-OR Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant

文件：919.78 Kbytes 页数：26 Pages

TI

德州仪器

丝印：U32F；Package：SOT-23；SN74AUC1G32 Single 2-Input Positive-OR Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant

文件：919.78 Kbytes 页数：26 Pages

TI

德州仪器

丝印：U32F；Package：SOT-23；SN74AUC1G32 Single 2-Input Positive-OR Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant

文件：919.78 Kbytes 页数：26 Pages

TI

德州仪器

丝印：U32F；Package：SOT-23；SN74AUC1G32 Single 2-Input Positive-OR Gate

1 Features 1• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 1000-V Charged-Device Model (C101) • Available in the Texas Instruments NanoFree™ Package • Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant

文件：919.78 Kbytes 页数：26 Pages

TI

德州仪器