丝印：U2N；Package：DSBGA；DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Available in the Texas Instruments NanoFree™ Package · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 1.9 ns at 1.8 V · Low Power Consumption, 10 m

文件：647.98 Kbytes 页数：21 Pages

TI

德州仪器

丝印：U2N；Package：DSBGA；DUAL BUFFER/DRIVER WITH 3-STATE OUTPUTS

FEATURES · Available in the Texas Instruments NanoFree™ Package · Optimized for 1.8-V Operation and Is 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation · Ioff Supports Partial-Power-Down Mode Operation · Sub-1-V Operable · Max tpd of 1.9 ns at 1.8 V · Low Power Consumption, 10 m

文件：647.98 Kbytes 页数：21 Pages

TI

德州仪器

丝印：U2NA70；Package：TO-251AA；700V N-Channel MOSFET

Features  RDS(ON), VGS@10V,ID@2A

文件：458.6 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：U2NA60；Package：TO-251AB；600V N-Channel MOSFET

文件：457.39 Kbytes 页数：8 Pages

PANJIT

強茂