丝印：U1；Package：SOT-23；NPN Medium Power Transistor

NPN Medium Power Transistor • This device is designed for general purpose amplifiers. • Sourced from process 38.

文件：44 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：U1；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High current(500mA). ● Low voltage(45V). APPLICATIONS ● General purpose amplifiers. ● Saturated switching and driver applications. ● Complement:BCX17.

文件：573.5 Kbytes 页数：1 Pages

LUGUANG

鲁光电子

丝印：U1；Package：SOT23；NPN general purpose transistor

FEATURES •High current (500 mA) •Low voltage (45 V). APPLICATIONS •General purpose amplification •Saturated switching and driver applications. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BCX17.

文件：298.87 Kbytes 页数：7 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：U1；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：482.77 Kbytes 页数：16 Pages

ROHM

罗姆

丝印：U1；Package：SSOP5；Voltage Detector IC built in Delay Citcuit

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in coun

文件：222.67 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：U1；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGE DETECTOR IC with counter timer BD45XXXG and BD46XXXG are series of high-accuracy detection voltage and low current consumption VOLTAGE DETECTOR ICs adopting CMOS process. New lineup of 156 types with delay time circuit have developed. Delay time is fixed in the IC due to the built-in co

文件：469.07 Kbytes 页数：4 Pages

ROHM

罗姆

丝印：U1；Package：SOD323F；Single Zener diodes

1.1 General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits 1.3 Applications  General regulation functions  Non-repetitive peak reverse power dissipation:  40 W  Wide working

文件：988.38 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：U1；Package：SOD323F；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Non-repetitive peak reverse power dissipation: ≤ 100 W for types ≤ 6.8 V • Non-repetitive peak reverse power dissipation

文件：310.63 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：U1；Package：SOT23；Double ESD protection diodes in SOT23 package

FEATURES • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 330 W at tp = 8/20 μs • Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A • Ultra-low reverse leakage current: IRM 23 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (su

文件：250.44 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：U1；Package：SOT23；Double ESD protection diode

1. General description Uni-directional double ESD protection diode in a SOT23 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. 2. Features and benefits • Uni-directional ESD protection of up to two lines • Max. peak pulse p

文件：245.9 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司