PESD5V2S2UT

Marking：05C；Package：SOT-23；TVS Diode Array

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)30A(8/20μs) RoHSCompliant

PESD5V2S2UT

Marking：U1；Package：SOT23；Double ESD protection diodes in SOT23 package

FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/20μs •Lowclampingvoltage:V(CL)R=20VatIpp=18A •Ultra-lowreverseleakagecurrent:IRM23kV •IEC61000-4-2;level4(ESD) •IEC61000-4-5(su

PESD5V2S2UT

Marking：WU1；Package：SOT-23；300 W peak pulse power (tp = 8/20μs)

Features 300Wpeakpulsepower(tp=8/20μs) Bidirectionalandunidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent Lowcapacitance(Cj=120pFtyp.) Protectiontwodatalines IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EF

PESD5V2S2UT

Double ESD protection diodes in SOT23 package

DESCRIPTION Uni-directionaldoubleESDprotectiondiodesinaSOT23plasticpackage.DesignedtoprotectuptotwotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. FEATURES •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsepower:Ppp=330Wattp=8/2

PESD5V2S2UT

Low VCEsat (BISS) transistors

PESD5V2S2UT

Double ESD protection diodes in SOT23 package

PESD5V2S2UT-Q

Marking：U1；Package：SOT23；Double ESD protection diode

1.Generaldescription Uni-directionaldoubleESDprotectiondiodeinaSOT23plasticpackage.Designedtoprotectupto twotransmissionordatalinesfromElectroStaticDischarge(ESD)damage. 2.Featuresandbenefits •Uni-directionalESDprotectionofuptotwolines •Max.peakpulsep

PESD5V2S2UT,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 二极管 描述：TVS DIODE 5VWM 20VC TO236AB

Nexperia USA Inc.