TW11N06FZ技术资料参数批发采购飞利浦-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
11N06	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
11N06LTA	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHB11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：76.41 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHD11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHP11N06LT	文件：114.92 Kbytes Page：12 Pages	N-channelTrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06LT	文件：69.16 Kbytes Page：9 Pages	TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PHT11N06T	文件：75.34 Kbytes Page：10 Pages	TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
PJD11N06A	文件：908.72 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT
PJD11N06A-AU	文件：820.13 Kbytes Page：6 Pages	60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A	PANJITPANJIT International Inc. 强茂強茂股份有限公司	PANJIT

详细参数

型号：
TW11N06FZ
功能描述：
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220

供应商	型号	品牌	批号	封装	库存	备注	价格
瀚佳科技(深圳)有限公司	TW11N600	AEG	18+	MODULE	2050	公司大量全新原装正品随时可以发货	询价
深圳市科雨电子有限公司	TW11RED1	APEM	20+	开关元件	96	就找我吧!--邀您体验愉快问购元件!	询价
上海金庆电子技术有限公司	TW-11RED12	APEMComponents	新		5	全新原装货期两周	询价
上海市鑫鸿达电子	TW-11RED12	APEM Components	2022+		1	全新原装货期两周	询价
深圳市一线半导体有限公司	TW1203GD175150	SAT	D/C03+		165		询价
深圳市艾宇特电子科技有限公司	TW-12-03-L-D-230-SM	SAMTEC/申泰	2102+	NA	6854	只做原厂原装正品假一赔十!	询价
深圳市骏创达科技有限公司	TW-12-03-L-D-230-SM	SAMTEC/申泰	2308+		462264	一级代理,原装正品,公司现货!	询价
贸泽芯城（深圳）电子科技有限公司	TW-12-03-L-D-250-150	SAMTEC/申泰			11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市河锋鑫科技有限公司	TW-12-03-L-D-345-110	SAMTEC/申泰	2018+	24PIN	600		询价
深圳市鑫炜纳电子有限公司	TW-12-03-L-D-345-110	SAMTEC/申泰	2022+	24PIN	600	原厂原装,假一罚十	询价

更多TW11N06FZ供应商更新时间2024-5-23 15:34:00

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