丝印：tTB；Package：SOT143B；NPN wideband silicon RF transistor

General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. Features and benefits ■ Low noise, hi

文件：310.33 Kbytes 页数：22 Pages

恩XP

丝印：B1020B；Package：TO-220SIS；Bipolar Transistors Silicon PNP Triple-Diffused Type

Applications • High-Current Switching • Hammer Drivers Features (1) High DC current gain: hFE = 2000 (min) (VCE = -3 V , IC = -3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -1.5 V (max) (IC = -3 A , IB = -6 mA) (3) Complementary to TTD1415B

文件：207.51 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：B1067B；Package：TO-126N；Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor)

Applications • Micromotor Drivers • Hammer Drivers • Switching • Power Amplifiers Features (1) High DC current gain : hFE = 2000 (min) (VCE = -2 V, IC = -1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA) (3) Complementary to TTD1509B

文件：310.55 Kbytes 页数：7 Pages

TOSHIBA

东芝

丝印：135N68A；Package：TO-263；68V N-Channel Trench MOSFET(Preliminary)

General Description  Trench Power technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：700.93 Kbytes 页数：9 Pages

WUMC

紫光国微

丝印：135N68A；Package：TO-263；68V N-Channel Trench MOSFET(Preliminary)

General Description  Trench Power technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：700.95 Kbytes 页数：9 Pages

WUMC

紫光国微

丝印：135N68A；Package：TO-263；68V N-Channel Trench MOSFET(Preliminary)

General Description  Trench Power technology  Low RDS(ON)  Low Gate Charge  Optimized for fast-switching applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

文件：700.95 Kbytes 页数：9 Pages

WUMC

紫光国微

丝印：145N08A；Package：TO-263；85V N-Channel Trench MOSFET(Preliminary)

General Description ● Trench Power technology ● Low RDS(ON) ● Low Gate Charge ● Optimized for fast-switching applications Applications ● Synchronous Rectification in DC/DC and AC/DC Converters ● Isolated DC/DC Converters in Telecom and Industria

文件：910.78 Kbytes 页数：11 Pages

WUMC

紫光国微

丝印：145N08A；Package：TO-263；85V N-Channel Trench MOSFET(Preliminary)

General Description ● Trench Power technology ● Low RDS(ON) ● Low Gate Charge ● Optimized for fast-switching applications Applications ● Synchronous Rectification in DC/DC and AC/DC Converters ● Isolated DC/DC Converters in Telecom and Industrial

文件：910.79 Kbytes 页数：11 Pages

WUMC

紫光国微

丝印：145N08A；Package：TO-263；85V N-Channel Trench MOSFET(Preliminary)

General Description ● Trench Power technology ● Low RDS(ON) ● Low Gate Charge ● Optimized for fast-switching applications Applications ● Synchronous Rectification in DC/DC and AC/DC Converters ● Isolated DC/DC Converters in

文件：915.27 Kbytes 页数：11 Pages

WUMC

紫光国微

丝印：145N08A；Package：TO-263；85V N-Channel Trench MOSFET(Preliminary)

General Description ● Trench Power technology ● Low RDS(ON) ● Low Gate Charge ● Optimized for fast-switching applications Applications ● Synchronous Rectification in DC/DC and AC/DC Converters ● Isolated DC/DC Converters in Telecom and Industrial

文件：910.77 Kbytes 页数：11 Pages

WUMC

紫光国微