Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

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IRF

Package Dimensions

(F) TSSOP Package 8-Pin

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IRF

14-LEAD THIN SHRINK SMALL OUTLINE

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STMICROELECTRONICS

意法半导体

Package Outline

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GMT

致新科技

SUGGESTED PAD LAYOUT

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DIODES

美台半导体

SUGGESTED PAD LAYOUT

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DIODES

美台半导体

Package Outline

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GMT

致新科技

Low-voltage 8-bit I2C-bus and SMBus low power I/O port with interrupt, weak pull-up and Agile I/O

文件：2.6785 Mbytes 页数：42 Pages

恩XP

Package Outline

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GMT

致新科技

SUGGESTED PAD LAYOUT

文件：404.18 Kbytes 页数：27 Pages

DIODES

美台半导体