FDU6N50

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FDU6N50F

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FDU6N50FTU

N-ChannelMOSFET500V,5.5A,1.15廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFailchild’sproprietary,planarstripe,DMOStechnology. Thisadvancetechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FDU6N50TU

N-ChannelUniFETTMMOSFET500V,6A,900m廓

FDU6N50TU

500VN-ChannelMOSFET

Description UniFETTMMOSFETisFairchildSemiconductor’shighvoltageMOSFETfamilybasedonplanarstripeandDMOStechnology.ThisMOSFETistailoredtoreduceon-stateresistance,andtoprovidebetterswitchingperformanceandhigheravalancheenergystrength.Thisdevicefamilyissuitablef

FQB6N50

500VN-ChannelMOSFET

Features •5.5A,500V,RDS(on)=1.3Ω@VGS=10V •Lowgatecharge(typical17nC) •LowCrss(typical11pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQB6N50TM

600VN-ChannelMOSFET

Features •5.5A,500V,RDS(on)=1.3Ω@VGS=10V •Lowgatecharge(typical17nC) •LowCrss(typical11pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability

FQD6N50C

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietaryplanarstripe,DMOStechnology

FQD6N50C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4.5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FQD6N50CTM

N-ChannelQFETMOSFET500V,4.5A,1.2