BD6968FVM

StandardSingle-phaseFullwave

DMG6968U

N-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •25mΩ@VGS=4.5V •29mΩ@VGS=2.5V •36mΩ@VGS=1.8V •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant •ESDProtectedUpTo2kV MechanicalData •Case:SOT-23 •CaseMaterial:MoldedPlast

DMG6968U

N-CHANNELENHANCEMENTMODEMOSFET

DMG6968U

N-CHANNELENHANCEMENTMODEMOSFET

DMG6968UDM

DUALN-CHANNELENHANCEMENTMODEMOSFET

DMG6968UDM

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •LowGateCharge •LowRDS(ON): ▪24mΩ@VGS=4.5V ▪28mΩ@VGS=2.5V ▪34mΩ@VGS=1.8V •LowInput/OutputLeakage •ESDProtectedupto2kVHBM •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •

DMG6968UQ

N-CHANNELENHANCEMENTMODEMOSFET

Description ThisMOSFETisdesignedtomeetthestringentrequirementsof automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: Applications Powermanagementfunctions DC-DCconverters Motorcontrols Features LowOn-Resistance Lo

DMG6968UTS

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •LowOn-Resistance •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage MechanicalData •Case:TSSOP-8 •CaseMaterial:MoldedPlastic,“Green”MoldingCompound.ULFlammabilityClassificationRating94V-0 •MoistureSensitivity:Level1perJ-STD-020 •Ter

GF6968A

Common-DrainDualN-ChannelMOSFET

Features •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •SpeciallyDesignedforLi-ionbatterypacksuse •Designedforbattery-switchapplications

GF6968AD

N-ChannelEnhancement-ModeMOSFETDie

Features •AdvancedTrenchProcessTechnology •HighDensityCellDesignforUltraLowOn-Resistance •FastSwitching •HightemperaturesolderinginaccordancewithCECC802/Reflowguaranteed •LogicLevel •IdealforLiionbatterypackapplications