Common-Drain Dual N-Channel MOSFET

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li-ion battery packs use • Designed for battery-switch applications

文件：152.81 Kbytes 页数：5 Pages

GE

N-Channel Enhancement-Mode MOSFET Die

Features • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Fast Switching • High temperature soldering in accordance with CECC802/Reflow guaranteed • Logic Level • Ideal for Li ion battery pack applications

文件：88.87 Kbytes 页数：5 Pages

GE

Common-Drain Dual N-Channel MOSFET

GE

N-Channel Enhancement-Mode MOSFET Die

General Semiconductor