首页 >TSM2N7002KD>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
DMOSTransistors(N-Channel) | GE GE Industrial Company | GE | ||
AdvancedSmallSignalMOSFET BVDSS=60V RDS(on)=5.0Ω ID=200mA FEATURES ●LowerRDS(on) ●ImprovedInductiveRuggedness ●FastSwitchingTimes ●LowerInputCapacitance ●ExtendedSafeOperatingArea ●ImprovedHighTemperatureReliability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
MinisizeofDiscretesemiconductorelements | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
SmallSignalMOSFETN-Channel Features: *LowOn-Resistance:3 *LowInputCapacitance:25PF *LowOutputCapacitance:6PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:7.5ns | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
NChannelSmallSignalMOSFET ●DRIVESSWITCHS,RELAYS,SOLENOIDS,LAMPS,DISPLAYS,ETC. ●LOWOFFSETVOLTAGE ●LOWVOLTAGEOPERATION ●EASILYDRIVENWITHOUTBUFFER | STANSONStanson Technology Stanson 科技 | STANSON | ||
N-ChannelEnhancementModeFieldEffectTransistor | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
LogicN-ChannelMOSFET GeneralDescription ThisPowerMOSFETisproducedusingplanarDMOStechnology.AndthisPowerMOSFETiswellsuitedforBatteryswitch,Loadswitch,Motorcontrollerandothersmallsignalswitches. Features ■RDS(on)(Max7.5Ω)@VGS=10V RDS(on)(Max7.5Ω)@VGS=4.5V ■GateCharge(Typical | semiWell semiWell | semiWell | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DESCRIPTION TheUTC2N7002usesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON). *VoltageControlledSmallSigna | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-ChannelSmallSignalMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-channel60V-1.8ohm-0.35A-SOT23-3L/TO-92STripFETPowerMOSFET Description ThisPowerMOSFETisthesecondgenerationofSTMicroelectronicsunique“singlefeaturesize”strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemark | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-CHANNELTRANSISTOR Description TheMTN7002N2isaN-channelenhancement-modeMOStransistor. Drain-SourseVoltageBVDSS60V Drain-GateVoltage(RGS=1M:)BVDSS60V Gate-SourceVoltageVGS+/-40V ContinuousDrainCurrent(Ta=25℃)ID200*1mA ContinuousDrainCurrent(Ta=100℃)ID115*1mA PulsedDrainCurre | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SMDSignalDMOSTransistor(N-Channel) Features •VoltageControlledSmallSignalSwitch •HighDensityCellDesignforLowRDS(ON) •RuggedandReliable •HighSaturationCurrentCapablity •RoHSCompliance | TAITRON TAITRON | TAITRON | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs | SUTEX Supertex, Inc | SUTEX | ||
N-channel60V-1.8廓-0.35A-SOT23-3L/TO-92STripFET??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
SmallSignalMOSFET SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–23 | SECOS SeCoS Halbleitertechnologie GmbH | SECOS | ||
TECHNICALSPECIFICATIONSOFN-CHANNELSMALLSIGNALMOSFET Description Designedforlowvoltageandlowcurrentapplicationssuchassmallservomotorcontrol,powerMOSFETgatedrivers,andotherswitchingapplications. | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
N-ChannelMOSFET | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
N-CHANNELMOSFET PRODUCTSUMMARY SOT-23Plastic-EncapsulateTransistors FEATURES HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability | SSC Silicon Standard Corp. | SSC | ||
N-ChannelMOSFET Features ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability Drain-SourcevoltageVDS60V DrainCurrentID115mA PowerDissipationPD225mW | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN |
详细参数
- 型号：
TSM2N7002KD
- 功能描述：
MOSFET Dual 60V 0.2Amp N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC |
1742+ |
SOT-363 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 | ||
TSC |
23+ |
SOT-363 |
63000 |
原装正品现货 |
询价 | ||
23+ |
N/A |
36100 |
正品授权货源可靠 |
询价 | |||
TSC |
19+ |
SOT-363 |
200000 |
询价 | |||
TSC |
2002 |
SOT-363 |
65000 |
原装正品假一罚万 |
询价 | ||
TSC |
2023+ |
SOT-363 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
TSC |
2020+ |
SOT-363 |
18800 |
绝对原装进口现货,假一赔十,价格优势! |
询价 | ||
TSC |
2013+PB |
SOT-363 |
13500 |
百分百原装正品现货 |
询价 | ||
TSC/台半 |
23+ |
SOT-363 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
原厂 |
2021+ |
60000 |
原装现货，欢迎询价 |
询价 |
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