首页 >TSM2N7002KD>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TSM2N7002KD | 60V N-Channel MOSFET Features ●LowOn-Resistance ●ESDProtection ●HighSpeedSwitching ●LowVoltageDrive | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | |
60V N-Channel MOSFET Features ●LowOn-Resistance ●ESDProtection ●HighSpeedSwitching ●LowVoltageDrive | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh | SUTEX Supertex, Inc | SUTEX | ||
N-CHANNELENHANCEMENTMODEVERTICALDMOSFET FEATURES *60VoltVCEO | Zetex Zetex Semiconductors | Zetex | ||
N-Channel60-V(D-S)MOSFET FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI | VishayVishay Siliconix 威世科技 | Vishay | ||
N-ChannelEnhancementModeFieldEffectTransistor Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-CHANNELENHANCEMENT-MODEMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTOR2N7002typeisanN-Channelenhancement-modeMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitanc | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
N-ChannelEnhancementModeFieldEffectTransistor N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-ChannelEnhancement-ModeMOSTransistor DESCRIPTION Calogic’s2N7002devicetypeisaverticalDMOSFETtransistorhousedinasurfacemountSOT-23formicro-assemblyapplications.Thedeviceisanexcellentchoiceforswitchingapplicationswherebreakdown(BV)andlowon-resistanceareimportant. | Calogic Calogic, LLC | Calogic | ||
0.3Amps,60VoltsN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FIELDEFFECTTRANSISTOR INTERFACEANDSWITCHINGAPPLICATION. FEATURES HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapablity. | KECKEC CORPORATION KEC株式会社 | KEC | ||
N-channelverticalD-MOStransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability:2N7002inSOT23. Features TrenchMOS™technology Veryfastswitching Logiclevelcompatible Subminiaturesurfacemountpackage. Applic | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
N-ChannelMOSFET Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF· •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •AdvancedTrenchProcessTechnology •HighInputImpedance •HighSpeedSwitching •CMOSLogicCompatibleInput •Marking:7002/S72 ·· | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PD:0.35W(Tamb=25℃) Draincurrent ID:250mA Drain-Sourcevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
SmallSignalMOSFETTransistor SmallSignalMOSFETTransistor FEATURES ●HighDensityCellDesignForLowRDS(ON)。 ●VoltageControlledSmallSwitch. ●RuggedandReliable. ●HighSaturationCurrentCapability. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
OptiMOS??Small-Signal-Transistor OptiMOSSmall-Signal-Transistor Features •N-channel •Enhancementmode •Logiclevel •Avalancherated •fastswitching •Pb-freelead-plating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 | DOINGTER |
详细参数
- 型号：
TSM2N7002KD
- 功能描述：
MOSFET Dual 60V 0.2Amp N channel MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TSC |
1742+ |
SOT-363 |
98215 |
只要网上有绝对有货!只做原装正品! |
询价 | ||
TSC |
23+ |
SOT-363 |
63000 |
原装正品现货 |
询价 | ||
23+ |
N/A |
36100 |
正品授权货源可靠 |
询价 | |||
TSC |
19+ |
SOT-363 |
200000 |
询价 | |||
TSC |
2002 |
SOT-363 |
65000 |
原装正品假一罚万 |
询价 | ||
TSC |
2023+ |
SOT-363 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
TSC |
2020+ |
SOT-363 |
18800 |
绝对原装进口现货,假一赔十,价格优势! |
询价 | ||
TSC |
2013+PB |
SOT-363 |
13500 |
百分百原装正品现货 |
询价 | ||
TSC/台半 |
23+ |
SOT-363 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
原厂 |
2021+ |
60000 |
原装现货，欢迎询价 |
询价 |
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