600V N-Channel Power MOSFET

General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient de

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TSC

台湾半导体

N-Channel Power MOSFET

文件：344.19 Kbytes 页数：7 Pages

TSC

台湾半导体

600V, 0.6A, Single N-Channel Power MOSFET

TSC

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Silicon N-Channel MOSFET

文件：518.6 Kbytes 页数：7 Pages

WINSEMIShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

N-Channel MOSFET

600V N-Channel MOSFET Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 8.5 nC (Typ.) □ BVDSS=600V,ID=2A □ Lower RDS(on) : 5Ω (Max) @VG=10V □ 100 Avalanche Tested

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WISDOM

N-Channel 650 V (D-S) MOSFET

文件：1.08793 Mbytes 页数：9 Pages

VBSEMI

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