600V N-Channel Power MOSFET

文件：376.66 Kbytes 页数：10 Pages

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台湾半导体

600V N-Channel Power MOSFET

文件：378.11 Kbytes 页数：10 Pages

TSC

台湾半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08799 Mbytes 页数：9 Pages

VBSEMI

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N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：291.37 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：228.59 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

600V N-Channel Power MOSFET

文件：376.66 Kbytes 页数：10 Pages

TSC

台湾半导体