CEH2313

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-4.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■TSOP-6package.

CES2313

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.6A,RDS(ON)=60mΩ@VGS=-10V. RDS(ON)=90mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2313A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.8A,RDS(ON)=55mΩ@VGS=-10V. RDS(ON)=86mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CHM2313PT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT3.6Ampere FEATURE *Smallflatpackage.(SC-59) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CHM2313QPT

P-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE30VoltsCURRENT4.6Ampere FEATURE *Smallflatpackage.(SC-74/SOT-457) *HighdensitycelldesignforextremelylowRDS(ON). *Ruggedandreliable. *Highsaturationcurrentcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplicatio

CM2313

T-13/4Bi-PinBase(.125)

T-13/4Bi-PinBase(.125)

CSC2313F

Digitallycontrolledstereosoundqualityprocessorwithloudness

Functionaloverviewandfeatures CSC2313Fisahigh-qualityaudioprocessorintegratingvolume,tone,leftandrightchannelbalanceandfrontandrearvolumecontrol.itapplies forcarradiosandhigh-fidelitysoundsystems.Thisproductoffersselectableinputgainandexternalloudnessfunct

CY2313ANZ

13Output,3.3VSDRAMBufferforDesktopPCswith3DIMMs

CY2313ANZ

13Output,3.3VSDRAMBufferforDesktopPCswith3DIMMs

EUA2313

6-WStereoClass-DAudioPowerAmplifierwithSpeakerProtection