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TSM1N80SCTA3中文资料台湾半导体数据手册PDF规格书
TSM1N80SCTA3规格书详情
General Description
The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
Features
● RDS(ON)=18Ω(Typ.) @ VGS=10V, ID=0.15A
● Low gate charge @ 5nC (Typ.)
● Low Crss @ 2.7pF (Typ.)
● Fast switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Taiwan Semiconductor(台湾半导 |
23+ |
TO-252(DPAK) |
7500 |
三极管/MOS管/晶体管 > 场效应管(MOSFET) |
询价 | ||
TSC |
1715+ |
SOP |
251156 |
只做原装正品现货假一赔十! |
询价 | ||
台半 |
20+ |
TO-223 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
询价 | ||
TSC台半 |
21+ |
TO-223 |
12588 |
原装正品 |
询价 | ||
TSC/台湾半导体 |
22+ |
TO-251 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
TSC/台湾半导体 |
2022+ |
TO-251 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
Taiwan Semiconductor |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
TSC/台湾半导体 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
询价 | ||
TSC/台湾半导体 |
24+ |
NA/ |
3936 |
原厂直销,现货供应,账期支持! |
询价 |
