TSM1N60SCTB0中文资料台湾半导体数据手册PDF规格书

General Description

The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstandhigh energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.

特性 Features

● Robust high voltage termination

● Avalanche energy specified

● Diode is characterized for use in bridge circuits

● Source to Drain diode recovery time comparable to a discrete fast recovery diode.

● IDSSand VDS(on)specified at elevated temperature