TSM1N80SCTA3规格书供应代理台湾半导体TSC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
TSM1N80SCTA3	文件：303.86 Kbytes Page：9 Pages	800V N-Channel MOSFET General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient desig 文件：303.86 Kbytes 页数：9 Pages	TSC 台湾半导体	TSC
TSM1N80SCTB0	文件：303.86 Kbytes Page：9 Pages	800V N-Channel MOSFET General Description The TSM1N80 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient desig 文件：303.86 Kbytes 页数：9 Pages	TSC 台湾半导体	TSC
1N80	文件：163.67 Kbytes Page：6 Pages	1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET 文件：163.67 Kbytes 页数：6 Pages	UTC 友顺	UTC
1N80	文件：182.22 Kbytes Page：6 Pages	1A, 800V N-CHANNEL POWER MOSFET 文件：182.22 Kbytes 页数：6 Pages	UTC 友顺	UTC
BRS1N80	文件：991.35 Kbytes Page：6 Pages	N-CHANNEL MOSFET in a TO-92 Plastic Package 文件：991.35 Kbytes 页数：6 Pages	FOSHAN 蓝箭电子	FOSHAN

更多TSM1N80SCT供应商更新时间2026-1-30 14:02:00