UPG2012TB

GaAsINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.27dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.

UPG2012TK

NECs쩌WSINGLECONTROLL,S-BANDSPDTSWITCH

DESCRIPTION TheµPG2012TKisaGaAsMMICforL-bandSPDT(SinglePoleDoubleThrow)switchwhichweredevelopedformobilephoneandanotherL-bandapplication. Thisdevicecanoperatefrequencyfrom0.5GHzto2.5GHz,havingthelowinsertionlossandhighisolation. Thisdeviceishous

UPG2012TK

L-BANDSPDTSWITCH

UPG2012TK

WSINGLECONTROLL,S-BANDSPDTSWITCH

UPG2012TK

GaAsINTEGRATEDCIRCUIT

FEATURES •Supplyvoltage:VDD=2.7to3.0V(2.8VTYP.) •Switchcontrolvoltage:Vcont(H)=2.7to3.0V(2.8VTYP.) :Vcont(L)=−0.2to+0.2V(0VTYP.) •Lowinsertionloss:LINS1=0.27dBTYP.@f=0.5to1.0GHz,VDD=2.8V,Vcont=2.8V/0V :LINS2=0.30dBTYP.@f=2.

VACL2012

Terminal,Compression

VACL2012BN

Terminal,Compression

VAUL2012

AluminumCompressionTerminalfor2/0AL/CU,2/06/1ACSR,3/0COMPACT

VLS2012E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount

VLS2012E

InductorsforPowerCircuitsWoundFerrite

OverviewoftheVLS-ESeries FEATURES Magneticshieldtypewoundinductorforpowercircuits. Low-profileproductlineupwithmax.heightsof0.8mm,0.95mm,1.0mm,1.2mm,and1.5mmallowingfordifferentusages. Highmagneticshieldconstructionandcompatiblewithhigh-densitymount