Time Delay Relays / TSB SERIES

Description The TSB Series is a totally solid-state, delay-on-break timing module. The TSB series is available with a fixed, external, or onboard adjustable time delay. Time delays from 0.05 to 600 seconds, in 4 standard ranges, cover over 90 of all OEM and commercial appliance timing applic

文件：563.87 Kbytes 页数：2 Pages

LITTELFUSE

力特

Interval Solid-State Output

文件：357.41 Kbytes 页数：1 Pages

ATC

EURO TERMINAL BLOCKS

[ADAM TECHNOLOGIES INC.] INTRODUCTION: Adam Tech TS series Euro Terminal Blocks offer the advantages of our leading designed while providing one of the lowest applied cost interconnections possible. This series includes 3 variations of our standard block, a microminiature type for ultra space sv

文件：534.9 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

EURO TERMINAL BLOCKS

[ADAM TECHNOLOGIES INC.] INTRODUCTION: Adam Tech TS series Euro Terminal Blocks offer the advantages of our leading designed while providing one of the lowest applied cost interconnections possible. This series includes 3 variations of our standard block, a microminiature type for ultra space sv

文件：534.9 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Frequency PNP Transistor

Features ● Low VCE(SAT) -0.15 @ IC / IB = --.5A / -50mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor

文件：44.45 Kbytes 页数：3 Pages

TSC

台湾半导体

Low Frequency PNP Transistor

Features ● Low VCE(SAT) -0.15 @ IC / IB = --.5A / -50mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor

文件：44.45 Kbytes 页数：3 Pages

TSC

台湾半导体

Low Vce(sat) PNP Transistor

Features ● Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor

文件：45.79 Kbytes 页数：3 Pages

TSC

台湾半导体

Low Vce(sat) PNP Transistor

Features ● Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor

文件：45.7 Kbytes 页数：3 Pages

TSC

台湾半导体

Low Vce(sat) PNP Transistor

Features ● Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor

文件：45.7 Kbytes 页数：3 Pages

TSC

台湾半导体

Low Vce(sat) PNP Transistor

Features ● Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) ● Excellent DC current gain characteristics Structure ● Epitaxial Planar Type ● PNP Silicon Transistor

文件：45.7 Kbytes 页数：3 Pages

TSC

台湾半导体