GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package

DESCRIPTION TSAL7200 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Peak wavelength: λp= 940 nm • High relia

文件：82.05 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSAL7200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 940 nm • H

文件：114.84 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity:  = ± 17° • Low forward voltage • Suitable for high pulse current operation • Good sp

文件：115.37 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Power Infrared Emitting Diode

文件：117.74 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

文件：110.92 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

文件：112.75 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Package type: leaded\n Package form: T-1¾\n Dimensions (in mm): Ø 5\n\n ;

Vishay

威世

Package：径向；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：EMITTER IR 940NM 100MA RADIAL

Vishay Semiconductor Opto Division

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSAL7200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 940 nm • H

文件：114.84 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: p = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity:  = ± 17° • Low forward voltage • Suitable for high pulse current operation • Good sp

文件：115.37 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司