IRFE9230

P-CHANNELPOWERMOSFET

VDSS-200V ID(cont)-3.6A RDS(on)0.825Ω FEATURES •SURFACEMOUNT •SMALLFOOTPRINT •HERMETICALLYSEALED •DYNAMICdv/dtRATING •AVALANCHEENERGYRATING •SIMPLEDRIVEREQUIREMENTS •LIGHTWEIGHT

IRFE9230

REPETITIVEAVALANCHEANDdv/dtRATEDHEXFETTRANSISTORSSURFACEMOUNT(LCC-18)

BVDSS-200V RDS(on)0.80Ω ID-4.0A Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignerstheextraflexibilitytheyneedt

IRFE9230

SimpleDriveRequirements

IRFF9230

P-ChannelMOSFETinaHermeticallysealedTO39

IRFF9230

-4.0A,-200V,0.800Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

IRFF9230

HEXFETTRANSISTORSTHRU-HOLE(TO-205AF)

200V,P-CHANNEL TheHEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance.TheHEXFET

IRFF9230

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

IRFP9230

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRFY9230

P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

IRH9230

TRANSISTORP-CHANNEL(BVdss=-200V,Rds(on)=0.8ohm,Id=-6.5A)

200Volt,0.8Ω,RADHARDHEXFET InternationalRectifier’sP-ChannelRADHARDtechnologyHEXFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas105Rads(Si).Underidenticalpre-andpost-radiationtestconditions,Internationa