MOSFETs Silicon N-channel MOS

Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 80 V) (5

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MOSFETs Silicon N-channel MOS

Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) (

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MOSFETs Silicon N-channel MOS

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators Features (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 44 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 250 V) (5

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丝印：65R044MFD；Package：TO-247；650V Super-Junction Power MOSFET

DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs， designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and L

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丝印：65R075DFD；Package：TO-247；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

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丝印：65R075DFD；Package：TO-247；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：757.4 Kbytes 页数：10 Pages

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丝印：65R075DFD；Package：TO-247；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：753.66 Kbytes 页数：10 Pages

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丝印：65R075DFD；Package：TO-247；650V Super-junction Power MOSFET

Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：753.66 Kbytes 页数：10 Pages

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丝印：80R300C；Package：TO-247；800V Super-junction Power MOSFET

Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：1.20968 Mbytes 页数：16 Pages

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丝印：80R300C；Package：TO-247；800V Super-junction Power MOSFET

Description 800V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：1.20966 Mbytes 页数：16 Pages

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