TPW5200FNH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=44mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (5

TQS5200

SPDTSwitchforSingle-bandandDual-band,802.11a/b/gSystems

GeneralDescription TheTQS5200isahighpower,single-poledouble-throwswitchconfiguredforTX-RXorAntennaDiversityswitchingapplicationsfortheWLANmarket.Thedeviceexhibitsindustry-leadinginsertionloss,isolationandpowerhandling. ProductFeatures •IntegratedSPDTSwitchfor

TQS5200

802.11a/b/gSingle/Dual-bandSPDTSwitch

TQS5200-PCB

802.11a/b/gSingle/Dual-bandSPDTSwitch

TSFF5200

HighSpeedIREmittingDiodeinø5mm(T–13/4)Package

DESCRIPTION TSFF5210isaninfrared,870nmemittingdiodeinGaAlAsdoublehetero(DH)technologywithhighradiantpowerandhighspeed,moldedinaclear,untintedplasticpackage. FEATURES •Packagetype:leaded •Packageform:T-13/4 •Dimensions(inmm):Ø5 •Leadswithstand-off •

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

DESCRIPTION TheTSHA520.seriesareinfrared,875nmemittingdiodesin GaAlAstechnology,moldedinaclear,untintedplastic package. FEATURES •Packagetype:leaded •Packageform:T-1¾ •Dimensions(inmm):Ø5 •Leadswithstand-off •Peakwavelength:λp=875nm •Highreliabilit

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

TSHA5200

InfraredEmittingDiode

Description TheTSHA520.seriesarehighefficiencyinfraredemittingdiodesinGaAlAsonGaAlAstechnology,moldedinaclear,untintedplasticpackage. IncomparisonwiththestandardGaAsonGaAstechnologythesehighintensityemittersfeatureabout70radiantpowerimprovement. Features

TSHA5200

InfraredEmittingDiode,875nm,GaAlAs

TSHA5200

InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs