MOSFETs Silicon N-channel MOS

Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 80 V) (5

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Power MOSFET (N-ch single 60V VDSS 150V)

Application Scope：Motor drivers / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚 Drain current ID 116 A \nPower Dissipation PD 142 W \nDrain-Source voltage VDSS 80 V \nGate-Source voltage VGSS +/-20 V ;

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MOSFETs Silicon N-channel MOS (U-MOS-H)

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N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

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TECHPUBLIC

台舟电子

Silicon N-channel MOS (U-MOS-H)

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.) (3) Small output charge: Qoss = 60 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS =

文件：613.9 Kbytes 页数：9 Pages

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东芝