Silicon N-channel MOS (U-MOS-H)

1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.) (3) Small output charge: Qoss = 60 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS =

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Power MOSFET (N-ch single 60V

Toshiba

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MOSFETs Silicon N-channel MOS

Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers Features (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 80 V) (5

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MOSFETs Silicon N-channel MOS (U-MOS-H)

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N-Channel Enhancement Mode MOSFET

Features + Advanced trench cell design + Low Thermal Resistance * Low Gate Charge

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