丝印：90R350A；Package：TO-247；900V Super-junction Power MOSFET

Description 900V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：872.73 Kbytes 页数：12 Pages

WUMC

紫光国微

丝印：90R350A；Package：TO-247；900V Super-junction Power MOSFET

Description 900V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：872.72 Kbytes 页数：12 Pages

WUMC

紫光国微

丝印：90R350A；Package：TO-247；900V Super-junction Power MOSFET

Description 900V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs，designed accordingtotheSJprinciple. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devicewithhighest robustness

文件：872.72 Kbytes 页数：12 Pages

WUMC

紫光国微

1-Line Uni-directional TVS Diode

Features © Ultra low leakage: nA level © Low operating voltage:2.5v © Low clamping voltage © 2-pin leadless package © Complies with following standards © ~ IEC 61000-4-2 (ESD) immunity test Air discharge: £30kV Contact discharge: +30kV © ~IEC61000-4-5 (Lightning) 10A (8/2015

文件：1.25676 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.54012 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.54012 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：N5.P；Package：DFN1006-3L；N-Channel Enhancement Mode MOSFET

Features VS = 20v + RDS(ON) =300mQ (typ) @ VGS= 2.5V/ + RDS(ON) =250mQ (typ) @ VGS= 4.5V/ + ESD Protected up to 2KV.

文件：2.54012 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

60V N-Channel Mosfet With ESD

Application ® Dict logic evel interface: TTLICMOS ® Divers: rays, solenoids, lamps, hammers display, memories, transistors, tc. @ Battery operated systems ® Solid-state relays

文件：1.03603 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

60V N-Channel Mosfet With ESD

Application ® Dict logic evel interface: TTLICMOS ® Divers: rays, solenoids, lamps, hammers display, memories, transistors, tc. @ Battery operated systems ® Solid-state relays

文件：1.03603 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子

丝印：4S；Package：DFN1006-3L.；60V N-Channel Mosfet With ESD

Application ® Dict logic evel interface: TTLICMOS ® Divers: rays, solenoids, lamps, hammers display, memories, transistors, tc. @ Battery operated systems ® Solid-state relays

文件：1.03603 Mbytes 页数：3 Pages

TECHPUBLIC

台舟电子