| 丝印 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TPS7H2211HKR/EM | 型号：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件：2.68613 Mbytes 页数：49 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.58479 Mbytes 页数：51 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKRSLASHEM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件：2.68613 Mbytes 页数：49 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKRSLASHEM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKRSLASHEM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.58479 Mbytes 页数：51 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 文件：1.8583 Mbytes 页数：41 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKRSLASHEM；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 文件：1.8583 Mbytes 页数：41 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件：2.68613 Mbytes 页数：49 Pages | 德州仪器 | ETC | |
TPS7H2211HKR/EM | 型号：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages | 德州仪器 | ETC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
CFP (HKR) |
6000 |
原厂原装,价格优势 |
询价 | ||
TI |
23+ |
CFP-16 |
5000 |
全新原装正品现货 |
询价 | ||
TI |
25+ |
原封装 |
66330 |
郑重承诺只做原装进口现货 |
询价 | ||
Texas Instruments |
23+/24+ |
32-TSSOP |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
询价 |
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