丝印：TPS7H3014HFTEM；Package：CFP；TPS7H3014-SP Radiation-Hardened, 14V, 4-Channel Sequencer

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to a total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event f

文件：7.67755 Mbytes 页数：60 Pages

TI

德州仪器

丝印：TPS7H3014HFTEM；Package：CFP；TPS7H3014-SP and TPS7H3014-SEP Radiation-Hardened, 14V, 4-Channel Sequencer

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to a total ionizing dose (TID) of 100 krad(Si) for the QML's and 50 krad(Si) for the SEP – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy tran

文件：7.67021 Mbytes 页数：64 Pages

TI

德州仪器

丝印：TPS7H3014HFTEM；Package：CFP；TPS7H3014-SP Radiation-Hardened, 14V, 4-Channel Sequencer

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to a total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event f

文件：7.67755 Mbytes 页数：60 Pages

TI

德州仪器

丝印：TPS7H3014HFTEM；Package：CFP；TPS7H3014-SP and TPS7H3014-SEP Radiation-Hardened, 14V, 4-Channel Sequencer

1 Features • Radiation performance: – Radiation hardness assurance (RHA) up to a total ionizing dose (TID) of 100 krad(Si) for the QML's and 50 krad(Si) for the SEP – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear energy tran

文件：7.67021 Mbytes 页数：64 Pages

TI

德州仪器