TPS7H6023HBXSLASHEM芯片代码芯片丝印反查-114ic电子网

首页 >丝印反查>TPS7H6023HBXEMEVAL-ONLY

型号	下载订购	功能描述	制造商上传企业	LOGO
TPS7H6023HBX/EM	文件：2.41584 Mbytes Page：47 Pages	丝印：TPS7H6023HBXEMEVAL-ONLY；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event transi 文件：2.41584 Mbytes 页数：47 Pages	TI 德州仪器	TI
TPS7H6023HBXSLASHEM	文件：2.41584 Mbytes Page：47 Pages	丝印：TPS7H6023HBXEMEVAL-ONLY；Package：CFP；TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A, Half Bridge GaN FET Gate Drivers 1 Features • Radiation Performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event transi 文件：2.41584 Mbytes 页数：47 Pages	TI 德州仪器	TI

更多TPS7H6023HBXEMEVAL-ONLY供应商更新时间2025-9-21 18:30:00