| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：TPS7H2211；Package：HTSSOP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.58479 Mbytes 页数：51 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211；Package：HTSSOP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211；Package：HTSSOP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211；Package：HTSSOP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件：2.68613 Mbytes 页数：49 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.61896 Mbytes 页数：51 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14V, 3.5A eFuse 1 Features • Total ionizing dose (TID) characterized to 100krad(Si) – Radiation hardness assurance availability of 100krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy t 文件：2.58479 Mbytes 页数：51 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211HKR；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件：1.91639 Mbytes 页数：42 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211HKR；Package：CFP；TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件：1.91639 Mbytes 页数：42 Pages | TI 德州仪器 | TI | ||
丝印：TPS7H2211HKR/EM；Package：CFP；TPS7H2211-SP and TPS7H2211-SEP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse 1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy 文件：2.68613 Mbytes 页数：49 Pages | TI 德州仪器 | TI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
询价 | ||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
9999 |
询价 | |||
TI/德州仪器 |
25+ |
原厂封装 |
10280 |
询价 | |||
TI德州仪器 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
TI |
25+ |
(KGD) |
6000 |
原厂原装,价格优势 |
询价 | ||
TI(德州仪器) |
2024+ |
N/A |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
TI |
16+ |
原厂封装 |
29 |
宇航IC只做原装假一罚十 |
询价 | ||
TI |
24+ |
N/A |
90000 |
原厂正规渠道现货、保证原装正品价格合理 |
询价 | ||
TI |
24+ |
30 |
全新原装 |
询价 |
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