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TPS7H2201MDAPTSEP

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR)

文件:2.74487 Mbytes 页数:49 Pages

TI

德州仪器

TPS7H2201MDAPTSEP

丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.70016 Mbytes 页数:51 Pages

TI

德州仪器

TPS7H2201MDAPTSEP

丝印:TPS7H2201;Package:HTSSOP;TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.66611 Mbytes 页数:51 Pages

TI

德州仪器

TPS7H2201-SEP

TPS7H2211-SP Radiation-Hardness-Assured (RHA) 14-V, 3.5-A eFuse

1 Features • Total ionizing dose (TID) characterized to 100 krad(Si) – Radiation hardness assurance availability of 100 krad(Si) • Single-event effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy

文件:1.91639 Mbytes 页数:42 Pages

TI

德州仪器

TPS7H2201-SEP

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR)

文件:2.74487 Mbytes 页数:49 Pages

TI

德州仪器

TPS7H2201-SEP

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件:2.70016 Mbytes 页数:51 Pages

TI

德州仪器

供应商型号品牌批号封装库存备注价格
TI德州仪器
22+
24000
原装正品现货,实单可谈,量大价优
询价
N/A
99
询价
TI
25+
(KGD)
6000
原厂原装,价格优势
询价
TI(德州仪器)
2024+
N/A
500000
诚信服务,绝对原装原盘
询价
24+
N/A
47000
一级代理-主营优势-实惠价格-不悔选择
询价
TI
23+
CFP-16
5000
全新原装正品现货
询价
TI
25+
原封装
66330
郑重承诺只做原装进口现货
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI/德州仪器
25+
原厂封装
9999
询价
更多TPS7H2201MDAPTSEP供应商 更新时间2025-10-11 15:01:00