丝印：TPS7H2201；Package：HTSSOP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件：2.70016 Mbytes 页数：51 Pages

TI

德州仪器

丝印：TPS7H2201；Package：HTSSOP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件：2.66611 Mbytes 页数：51 Pages

TI

德州仪器

丝印：TPS7H2201；Package：HTSSOP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件：2.70016 Mbytes 页数：51 Pages

TI

德州仪器

丝印：TPS7H2201；Package：HTSSOP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件：2.70016 Mbytes 页数：51 Pages

TI

德州仪器

丝印：TPS7H2201HKREM；Package：CFP；TPS7H2201-SP Radiation Hardened 1.5-V to 7-V, 6-A Load Switch

1 Features 1• Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single

文件：1.55903 Mbytes 页数：40 Pages

TI

德州仪器

丝印：TPS7H2201HKREM；Package：CFP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR)

文件：2.74487 Mbytes 页数：49 Pages

TI

德州仪器

丝印：TPS7H2201HKREM；Package：CFP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件：2.70016 Mbytes 页数：51 Pages

TI

德州仪器

丝印：TPS7H2201HKREM；Package：CFP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件：2.66611 Mbytes 页数：51 Pages

TI

德州仪器

丝印：TPS7H2201HKREM；Package：CFP；TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features • Standard micro circuit available, SMD 5962R17220 • Vendor item drawing available, VID V62/23608 • Radiation performance: – Radiation hardness assurance (RHA) up to TID 100krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) i

文件：2.66611 Mbytes 页数：51 Pages

TI

德州仪器

丝印：TPS7H2201HKREM；Package：CFP；TPS7H2201-SP Radiation Hardened 1.5-V to 7-V, 6-A Load Switch

1 Features 1• Radiation performance: – Radiation hardness assurance (RHA) up to TID 100 krad(Si) – Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75 MeV-cm2/mg – SEFI/SET characterized to LET = 75 MeV-cm2/mg • Integrated single

文件：1.55903 Mbytes 页数：40 Pages

TI

德州仪器