TPS7H2201MDAPTSEP中文资料德州仪器数据手册PDF规格书

1 Features

• Standard micro circuit available, SMD

5962R17220

• Vendor item drawing available, VID V62/23608

• Radiation performance:

– Radiation hardness assurance (RHA) up to TID

100 krad(Si)

– Single event latchup (SEL), single event

burnout (SEB), and single event gate rupture

(SEGR) immune to LET = 75 MeV-cm2/mg

– SEFI/SET characterized to

LET = 75 MeV-cm2/mg

• Integrated single channel eFuse

• Input voltage range: 1.5 V to 7 V

• Low on-resistance (RON) of :

– 35-mΩ maximum at 25°C and VIN = 5 V for

CFP and KGD

– 21.8-mΩ maximum at 25°C and VIN = 5 V for

HTSSOP

• 6-A maximum continuous switch current

• Low control input threshold enables use of

1.2-, 1.8-, 2.5-, and 3.3-V logic

• Configurable rise time (soft start)

• Reverse current protection

• Programmable and internal current limiting

(fast-trip)

• Programmable fault timer (current limit and

retry modes)

• Thermal shutdown

• Ceramic and plastic package with thermal pad

2 Applications

• Space satellite power management and

distribution

• Radiation hardened and tolerant power tree

applications

• Available in military (–55°C to 125°C) temperature

range

3 Description

The TPS7H2201 is a single channel eFuse that

provides configurable rise time to minimize inrush

current and reverse current protection. The device

contains a P-channel MOSFET that can operate over

an input voltage range of 1.5 V to 7 V and can support

a maximum continuous current of 6 A. The switch

is controlled by an on and off input (EN), which is

capable of interfacing directly with low-voltage control

signals.

The TPS7H2201 is available in a ceramic and plastic

package with integrated thermal pad allowing for high

power dissipation. The device is characterized for

operation over the free-air temperature range of

–55°C to 125°C.