丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1120；Package：SOIC；DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W at VGS = –10 V 3-V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015 description The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have

文件：301.03 Kbytes 页数：17 Pages

TI

德州仪器

丝印：1200；Package：VSSOP；TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件：1.79799 Mbytes 页数：38 Pages

TI

德州仪器

TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件：1.79799 Mbytes 页数：38 Pages

TI

德州仪器

TPS1200-Q1 45-V, Automotive Low IQ Smart High Side Driver with Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件：1.78516 Mbytes 页数：33 Pages

TI

德州仪器

TPS1200-Q1 45V, Automotive Low IQ Smart High Side Driver With Short-Circuit Protection and Diagnostics

1 Features • AEC-Q100 automotive qualified for automotive applications – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • 3.5V to 40V input range (45V absolute maxi

文件：1.79799 Mbytes 页数：38 Pages

TI

德州仪器