丝印：TPS16632；Package：VQFN；60-V, 6-A eFuse with adjustable output power limiting

文件：3.37942 Mbytes 页数：42 Pages

TI

德州仪器

丝印：TPS16632；Package：VQFN；TPS1663x 60-V, 6-A eFuse with Adjustable Output Power Limiting

文件：3.50436 Mbytes 页数：43 Pages

TI

德州仪器

丝印：TPS16632；Package：VQFN；TPS1663x 60-V, 6-A eFuse with Adjustable Output Power Limiting

文件：3.50438 Mbytes 页数：43 Pages

TI

德州仪器

单路 P 沟道增强-模式 MOSFET

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side swi • Low rDS(on) . . . 0.18 Typ at VGS = -10 V\n• Requires No External VCC\n• VGS(th) = -1.5 V Max\n• ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015\n LinBICMOS is a trademark of Texas Instruments Incorporated;

TI

德州仪器

单路 P 沟道增强-模式 MOSFET

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the • Low rDS(on) . . . 0.09 Typ at VGS = -10 V\n• Requires No External VCC\n• VGS(th) = -1.5 V Max\n• ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015;

TI

德州仪器

Automotive power Schottky rectifier

ST

意法半导体

包装：散装 类别：光电器件 LED 指示 - 分立 描述：LED INDICATION SMD

Stanley Electric Co

包装：散装 类别：光电器件 LED 指示 - 分立 描述：LED INDICATION SMD

Stanley Electric Co

包装：散装 类别：光电器件 LED 指示 - 分立 描述：LED

Stanley Electric Co