SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

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德州仪器

SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

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德州仪器

单路 P 沟道增强-模式 MOSFET

The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTM process. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 uA, the TPS1100 is the ideal high-side swi • Low rDS(on) . . . 0.18 Typ at VGS = -10 V\n• Requires No External VCC\n• VGS(th) = -1.5 V Max\n• ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015\n LinBICMOS is a trademark of Texas Instruments Incorporated;

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德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：1100；Package：SOIC；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：PS1100；Package：TSSOP；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器

丝印：PS1100；Package：TSSOP；SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

Low rDS(on) . . . 0.18 W Typ at VGS = –10 V 3 V Compatible Requires No External VCC TTL and CMOS Compatible Inputs VGS(th) = –1.5 V Max Available in Ultrathin TSSOP Package (PW) ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015 description The TPS1100 is a single P-channel enhanc

文件：275.67 Kbytes 页数：15 Pages

TI

德州仪器